Forward biasing of a solid-state device will cause the device to

Forward biasing of a solid-state device will cause the device to

• A. Turn off.
• B. Remains non-conducting.
• C. Conduct via Zener breakdown.
• D. Conduct.

Answer: (D)

Forward bias reduces the barrier at a p-n junction, letting charge carriers cross more easily and creating current flow. When the anode is made more positive than the cathode, the depletion region narrows and the diode conducts once the applied voltage is sufficient (about 0.7 V for silicon). This is why forward-biased devices conduct. The other ideas describe reverse-bias behavior or a breakdown mechanism that isn’t how forward bias operates. Conducting via Zener breakdown happens under reverse bias, not in forward bias.

Forward bias reduces the barrier at a p-n junction, letting charge carriers cross more easily and creating current flow. When the anode is made more positive than the cathode, the depletion region narrows and the diode conducts once the applied voltage is sufficient (about 0.7 V for silicon). This is why forward-biased devices conduct. The other ideas describe reverse-bias behavior or a breakdown mechanism that isn’t how forward bias operates. Conducting via Zener breakdown happens under reverse bias, not in forward bias.